FQD8T10, FQU8P10 دیتاشیت

FQD8T10, FQU8P10

مشخصات دیتاشیت

نام دیتاشیت FQD8T10, FQU8P10
حجم فایل 1442.837 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FQD8T10, FQU8P10

دانلود دیتاشیت

سایر مستندات

FQU8P10TU 11 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQU8P10TU
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.5W;44W
  • Total Gate Charge (Qg@Vgs): 15nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 470pF@25V
  • Continuous Drain Current (Id): 6.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 530mΩ@3.3A,10V
  • Package: TO-251-3
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: FQU8
  • detail: P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK

محصولات مشابه